the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe switching n-channel power mos fet data sheet document no. d14138ej5v0ds00 (5th edition) date published december 2002 ns cp(k) printed in japan the mark shows major revised points. 1999 description these products are n-channel mos field effect transistor designed for high current switching applications. features ? channel temperature 175 degree rated ? super low on-state resistance r ds(on) = 8.6 m ? max. (v gs = 10 v, i d = 41 a) ? low c iss : c iss = 3500 pf typ. ? built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 55 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) note1 i d(dc) 82 a drain current (pulse) note2 i d(pulse) 300 a total power dissipation (t a = 25c) p t 1.8 w total power dissipation (t c = 25c) p t 163 w channel temperature t ch 175 c storage temperature t stg ?55 to +175 c single avalanche current note3 i as 72 / 49 / 17 a single avalanche energy note3 e as 51 / 240 / 289 mj notes 1. calculated constant current according to max. allowable channel temperature. 2. pw 10 s, duty cycle 1% 3. starting t ch = 25c, v dd = 28 v, r g = 25 ? , v gs = 20 0 v (see figure 4.) thermal resistance channel to case thermal resistance r th(ch-c) 0.92 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w ordering information part number package NP82N055CHE to-220ab np82n055dhe to-262 np82n055ehe to-263 (mp-25zj) np82n055khe to-263 (mp-25zk) (to-220ab) (to-262) (to-263)
data sheet d14138ej5v0ds 2 NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 55 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate to source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.0 4.0 v forward transfer admittance | y fs |v ds = 10 v, i d = 41 a 19 38 s drain to source on-state resistance r ds(on) v gs = 10 v, i d = 41 a 6.9 8.6 m ? input capacitance c iss 3500 5250 pf output capacitance c oss 550 830 pf reverse transfer capacitance c rss v ds = 25 v v gs = 0 v f = 1 mhz 270 490 pf turn-on delay time t d(on) 31 69 ns rise time t r 18 45 ns turn-off delay time t d(off) 61 120 ns fall time t f v dd = 28 v, i d = 41 a v gs(on) = 10 v r g = 1 ? 19 47 ns total gate charge q g 65 100 nc gate to source charge q gs 18 nc gate to drain charge q gd v dd = 44 v v gs = 10 v i d = 82 a 24 nc body diode forward voltage v f(s-d) i f = 82 a, v gs = 0 v 1.0 v reverse recovery time t rr 45 ns reverse recovery charge q rr i f = 82 a, v gs = 0 v di/dt = 100 a/ s 63 nc test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 ? 50 ? d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ? d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d14138ej5v0ds 3 NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe typical characteristics (t a = 25c) figure2. total power dissipation vs. case temperature t c - case temperature - ?c p t - total power dissipation - w 0 0 25 50 75 100 125 150 175 200 175 150 125 100 75 50 25 figure1. derating factor of forward bias safe operating area dt - percentage of rated power - % 0 0 25 50 75 100 125 150 175 200 20 40 60 80 100 figure4. single avalanche energy derating factor starting t ch - starting channel temperature - ?c single pulse avalanche energy - mj 0 25 150 200 250 300 350 50 75 100 125 150 175 50 100 t c - case temperature - ?c i as = 17 a 289 mj 240 mj 51 mj 49 a 72 a figure5. transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse r th(ch-a) = 83.3 ?c /w 10 100 r th(ch-c) = 0.92 ?c /w figure.3 forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 1 0.1 10 100 1000 1 10 100 t c = 25?c single pulse i d(pulse) r d s (o n ) lim ited (at v g s = 10 v ) i d(dc) pw = 10 s 100 s 1 ms 0.1 dc power dissipation limited
data sheet d14138ej5v0ds 4 NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe figure8. forward transfer admittance vs. drain current figure9. drain to source on-state resistance vs. gate to source voltage figure10. drain to source on-state resistance vs. drain current figure11. gate to source threshold voltage vs. channel temperature t ch - channel temperature - ? c v gs(th) - gate to source threshold voltage - v v ds = v gs i d = 250 a 1.0 2.0 4.0 3.0 ? 50 0 50 100 150 0 i d - drain current - a | y fs | - forward transfer admittance - s v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 0 15 10 5 0.01 0.1 1 10 100 10 100 20 0.1 0.01 1 10 20 i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 10 10 1 20 100 1000 pulsed 0 v gs = 10 v v ds = 10 v t a = 175 ? c 75 ? c 25 ? c ? 50 ? c pulsed i d = 41 a pulsed figure7. drain current vs. drain to source voltage figure6. forward transfer characteristics v ds - drain to source voltage - v i d - drain current - a v gs - gate to source voltage - v i d - drain current - a 1 0.1 0 0 2 3 456 100 10 100 1000 250 300 200 150 1 pulsed 2 v gs =10 v 34 6 7 5 50 pulsed v ds = 10 v t a = ? 55 ? c 25 ? c 75 ? c 150 ? c 175 ? c
data sheet d14138ej5v0ds 5 NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe figure12. drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? figure13. source to drain diode forward voltage figure14. capacitance vs. drain to source voltage figure15. switching characteristics 0 ? 50 4 6 8 10 2 12 14 0 50 100 150 figure16. reverse recovery time vs. drain current 16 18 figure17. dynamic input/output characteristics v gs = 10 v i d = 41 a 1.5 i sd - diode forward current - a 0 v sd - source to drain voltage - v 1.0 0.5 pulsed 0.1 1 10 100 1000 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 0.1 0.1 100 1000 10000 100000 1 10 100 v gs = 0 v f = 1 mhz 1 10 1000 100 10 100 v gs - gate to source voltage - v i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1.0 10 100 q g - gate charge - nc v ds - drain to source voltage - v 0 0 80 40 20 60 20 40 60 80 2 4 v ds 1000 100 6 10 12 14 16 8 v gs v dd = 44 v i d = 82 a 28 v 11 v pulsed v gs = 0 v v gs = 10 v c iss c oss c rss t d(on) t d(off) t f t r
data sheet d14138ej5v0ds 6 NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe package drawings (unit: mm) 1) to-220ab (mp-25) 3) to-263 (mp-25zj) 4) to-263 (mp-25zk) 2) to-262 (mp-25 fin cut) 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 typ. 3.60.2 4 3.00.3 1.30.2 0.750.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.30.2 0.50.2 2.80.2 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10 typ. 1.30.2 0.750.3 2.54 typ. 2.54 typ. 8.50.2 12.7 min. 1.30.2 0.50.2 2.80.2 1.00.5 4 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 5.70.4 4 4.8 max. 1.30.2 0.50.2 1.gate 2.drain 3.source 4.fin (drain) 0.70.2 10 typ. 0.5r typ. 0.8r typ. 2.80.2 10.00.3 8.0 typ. 2.54 0.750.2 9.150.3 2.540.25 15.250.5 1.350.3 123 4 2.5 4.450.2 1.30.2 0.50.2 0 to 8 o 1.gate 2.drain 3.source 4.fin (drain) no plating 7.88 min. 0.025 to 0.25 0.25
data sheet d14138ej5v0ds 7 NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
NP82N055CHE,np82n055dhe,np82n055ehe,np82n055khe the information in this document is current as of december, 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) (1) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. (2) "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). ? ? ? ? ? ? m8e 02. 11-1
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